Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 3.25 A PDISS Power Dissipation 127 W TJ Junction Temperature +200 °C TSTG Storage Temp...
TH513: Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 3.25...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 110 | V |
VCEO | Collector-Emitter Voltage | 55 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 3.25 | A |
PDISS | Power Dissipation | 127 | W |
TJ | Junction Temperature | +200 | °C |
TSTG | Storage Temperature | - 65 to +150 | °C |
The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.