T2800D, T2800DG, T2800E Selling Leads, Datasheet
MFG:ON Package Cooled:8000 D/C:04+
T2800D, T2800DG, T2800E Datasheet download
Part Number: T2800D
MFG: ON
Package Cooled: 8000
D/C: 04+
T2800D, T2800DG, T2800E
- Table of contents:
Info of T2800D
Info of T2800DG
Info of T2800E
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About T2800D
PDF/DataSheet Download
Datasheet: T2800D
File Size: 65605 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About T2800
PDF/DataSheet Download
Datasheet: T2800
File Size: 71371 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About T2800
PDF/DataSheet Download
Datasheet: T2800
File Size: 71371 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
T2800D Maximum Ratings
|
Rating
|
Symbol |
Value |
Unit |
| Peak Repetitive OffState Voltage(1) (TJ = 40 to +125°C, Gate Open) |
VDRM VRRM |
400 |
Volts |
| OnState RMS Current (All Conduction Angles, TC = +80°C) |
IT(RMS) |
8.0 |
Amps |
| Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz TC = +80°C) |
ITSM |
100 |
Amps |
| Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
40 |
A2s |
| Peak Gate Power (TC = +80°C, Pulse Width = 10 s) |
PGM |
16 |
Watts |
| Average Gate Power (TC = +80°C, t= 8.3 ms) |
PG(AV) |
0.35 |
Watt |
| Peak Gate Current (Pulse Width = 10 s, TC = +80°C) |
IGM |
4.0 |
Amp |
| Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
| Storage Temperature Range |
Tstg |
40 to +150 |
°C |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
T2800DG General Description
Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.
T2800DG Maximum Ratings
| Rating | Symbol | Value | Unit |
| Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Gate Open) |
VDRM, VRRM |
400 | V |
| On−State RMS Current (All Conduction Angles, TC = +80°C) |
IT(RMS) | 8.0 | A |
| Peak Non−Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = +80°C) |
ITSM | 100 | A |
| Circuit Fusing Considerations (t = 8.3 ms) | I2t | 40 | A2s |
| Peak Gate Power (Pulse Width = 10 s, TC = +80°C) |
PGM | 16 | W |
| Average Gate Power (t = 8.3 ms, TC = +80°C) |
PG(AV) | 0.35 | W |
| Average Gate Power (t = 8.3 ms, TC = +80°C) |
IGM | 4.0 | A |
| Operating Junction Temperature Range | TJ | -40 to +125 | °C |
| Storage Temperature Range | Tstg | -40 to +150 | °C |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
T2800DG Features
• Blocking Voltage to 400 V
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• Four Quadrant Gating
• Pb−Free Package is Available*
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• Four Quadrant Gating
• Pb−Free Package is Available*
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