On-State RMS Current (It RMS)
:
Mounting Style
: Through Hole
Package / Case
: TO-220AB
Rated Repetitive Off-State Voltage VDRM
: 400 V
Off-State Leakage Current @ VDRM IDRM
: 0.01 mA
Holding Current (Ih Max)
: 30 mA
Gate Trigger Voltage (Vgt)
: 2.5 V
Packaging
: Box
Breakover Current IBO Max
: 100 A
Gate Trigger Current (Igt)
: 60 mA
Features: • Blocking Voltage to 400 V
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• Four Quadrant Gating
• Pb−Free Package is Available*Specifications
| Rating |
Symbol |
Value |
Unit |
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +125°C, Gate Open) |
VDRM,
VRRM |
400 |
V |
On−State RMS Current
(All Conduction Angles, TC = +80°C) |
IT(RMS) |
8.0 |
A |
Peak Non−Repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, TJ = +80°C) |
ITSM |
100 |
A |
| Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
40 |
A2s |
Peak Gate Power
(Pulse Width = 10 s, TC = +80°C) |
PGM |
16 |
W |
Average Gate Power
(t = 8.3 ms, TC = +80°C) |
PG(AV) |
0.35 |
W |
Average Gate Power
(t = 8.3 ms, TC = +80°C) |
IGM |
4.0 |
A |
| Operating Junction Temperature Range |
TJ |
-40 to +125 |
°C |
| Storage Temperature Range |
Tstg |
-40 to +150 |
°C |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
DescriptionT2800DG is designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.
T2800DG Data Sheet
