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T2800/D

Application• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability• T2800 - Four Quadrant GatingSpecifications Rating Symbol ...

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T2800/D: Application• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Diss...

T2800/D Data Sheet

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Part Number:
T2800/D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Application

• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• T2800 - Four Quadrant Gating


Specifications

Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1)
(TJ = 40 to +100°C, Gate Open)
T2800 D
M
VDRM
400
600
Volts
RMS On-State Current (TC = +80°C)
(Conduction Angle = 360°)
IT(RMS)
8
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = +80°C)
ITSM
100
Amps
Circuit Fusing
(t = 8.3 ms)
I2t
40
A2s
Peak Gate Power (Pulse Width = 1 ms)
PGM
16
Watts
Average Gate Power
PG(AV)
0.35
Watt
Peak Gate Trigger Current (Pulse Width = 1 ms)
IGTM
4
Amps
Operating Junction Temperature Range
TJ
40 to +100
°C
Storage Temperature Range
Tstg
40 to +150
40 to +150



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