T2500DFP, T2500DG, T2500FP Selling Leads, Datasheet
MFG:ST Package Cooled:8000 D/C:TO-
T2500DFP, T2500DG, T2500FP Datasheet download
Part Number: T2500DFP
MFG: ST
Package Cooled: 8000
D/C: TO-
T2500DFP, T2500DG, T2500FP
- Table of contents:
Info of T2500DFP
Info of T2500DG
Info of T2500FP
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About T2500DFP
PDF/DataSheet Download
Datasheet: T2500DFP
File Size: 85906 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About T25
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Datasheet: T25
File Size: 1086150 KB
Manufacturer:
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About T2500FP
PDF/DataSheet Download
Datasheet: T2500FP
File Size: 85906 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
T2500DFP General Description
. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
T2500DFP Maximum Ratings
| Rating | Symbol | Value | Unit |
| Peak Repetitive Off-State Voltage(1) (TJ = 40 to 100°C, Gate Open) | VDRM | 400 | Volts |
| RMS On-State Current (TC = 80°C) (Full-Cycle Sine Wave 50 to 60 Hz) |
IT(RMS) | 6 | Amps |
| Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) |
ITSM | 60 | Amps |
| Circuit Fusing (t = 8.3 ms) |
I2t | 40 | A2s |
| Peak Gate Power (TC = +80°C, Pulse Width = 1 ms) |
PGM | 1 | Watts |
| Average Gate Power (TC = +80°C, t = 8.3 ms) |
PG(AV) | 0.2 | Watt |
| Peak Gate Trigger Current (Pulse Width = 10 ms) | IGM | 4 | Amp |
| RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) | VISO | 1500 | Volts |
| Operating Junction Temperature Range | TJ | 40 to +100 | °C |
| Storage Temperature Range | Tstg | 40 to +150 | °C |
T2500DFP Features
• Blocking Voltage to 400 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
T2500DG Maximum Ratings
| Rating | Symbol | Value | Unit |
| Peak Repetitive Off−State Voltage (Note 1) (Sine Wave 50 to 60 Hz, TJ = −40 to +100°C, Gate Open) |
VDRM, VRRM |
400 | V |
| On−State RMS Current (TC = +80°C) (Full Cycle Sine Wave 50 to 60 Hz) |
IT(RMS) | 6.0 | A |
| Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) |
ITSM | 60 | A |
| Circuit Fusing Considerations (t = 8.3 ms) | I2t | 15 | A2s |
| Peak Gate Power (TC = +80°C, Pulse Width = 10sec) |
PGM | 16 | W |
| Average Gate Power (TC = +80°C, t = 8.3 ms) |
PG(AV) | 0.2 | W |
| Peak Gate Current (Pulse Width = 10 sec) | IGM | 4.0 | A |
| Operating Junction Temperature Range | TJ | −40 to +125 | °C |
| Storage Temperature Range | Tstg | −40 to +150 | °C |
T2500DG Features
• Blocking Voltage 400 V
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• High Surge Current Capability 60 A Peak at TC = 80°C
• Pb−Free Package is Available*
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• High Surge Current Capability 60 A Peak at TC = 80°C
• Pb−Free Package is Available*
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