T2500DG

On-State RMS Current (It RMS) :
Mounting Style : Through Hole
Package / Case : TO-220AB
Rated Repetitive Off-State Voltage VDRM : 400 V
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Holding Current (Ih Max) : 30 mA
Gate Trigger Voltage (Vgt) : 2.5 V
Packaging : Box
Gate Trigger Current (Igt) : 60 mA
Breakover Current IBO Max : 60 A


Features:

• Blocking Voltage 400 V
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• High Surge Current Capability 60 A Peak at T_C = 80°C
• Pb−Free Package is Available*


Specifications

Rating	Symbol	Value	Unit
Peak Repetitive Off−State Voltage (Note 1) (Sine Wave 50 to 60 Hz, TJ = −40 to +100°C, Gate Open)	VDRM, VRRM	400	V
On−State RMS Current (TC = +80°C) (Full Cycle Sine Wave 50 to 60 Hz)	IT(RMS)	6.0	A
Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C)	ITSM	60	A
Circuit Fusing Considerations (t = 8.3 ms)	I2t	15	A2s
Peak Gate Power (TC = +80°C, Pulse Width = 10sec)	PGM	16	W
Average Gate Power (TC = +80°C, t = 8.3 ms)	PG(AV)	0.2	W
Peak Gate Current (Pulse Width = 10 sec)	IGM	4.0	A
Operating Junction Temperature Range	TJ	−40 to +125	°C
Storage Temperature Range	Tstg	−40 to +150	°C