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T2500DFP

Features: • Blocking Voltage to 400 Volts• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability• Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat Dissipation and DurabilitySpecifications Rating Symbol Value U...

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SeekIC No. : 004511041 Detail

T2500DFP: Features: • Blocking Voltage to 400 Volts• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability• Small, Rugged, Isolated Construction for Low ...

T2500DFP Data Sheet

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Part Number:
T2500DFP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• Blocking Voltage to 400 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
   Dissipation and Durability


Specifications

Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) (TJ = 40 to 100°C, Gate Open) VDRM 400 Volts
RMS On-State Current (TC = 80°C)
(Full-Cycle Sine Wave 50 to 60 Hz)		 IT(RMS) 6 Amps
Peak Nonrepetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)		 ITSM 60 Amps
Circuit Fusing
(t = 8.3 ms)		 I2t 40 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 ms)		 PGM 1 Watts
Average Gate Power
(TC = +80°C, t = 8.3 ms)		 PG(AV) 0.2 Watt
Peak Gate Trigger Current (Pulse Width = 10 ms) IGM 4 Amp
RMS Isolation Voltage (TA = 25°C, Relative Humidity  20%) VISO 1500 Volts
Operating Junction Temperature Range TJ 40 to +100 °C
Storage Temperature Range Tstg 40 to +150 °C



Description

T2500DFP is designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch of T2500DFP from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.




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