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SXA-289, SXA-3318B, SXA-389

Table of contents:
Info of SXA-289
Info of SXA-3318B
Info of SXA-389

SXA-289, SXA-3318B, SXA-389 Selling Leads, Datasheet

MFG:Sirenza Package Cooled:SOT89 D/C:03+

SXA-289, SXA-3318B, SXA-389 Datasheet download

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Part Number: SXA-289

MFG: Sirenza

Package Cooled: SOT89

D/C: 03+

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SXA-289 General Description

Stanford Microdevices' SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications.

Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.

SXA-289 Maximum Ratings

Parameter	Absolute Limit
Device Voltage	6V
Device Current	200mA
Power Dissipation	1500mW
RF Input Power	100mW
Junction Temperature	+150°C
Operating Temperature	-40°C to +85°C
Storage Temperature	-65°C to +150°C

SXA-289 Features

• Patented High Reliability GaAs HBT Technology
• High Output 3rd Order Intercept : +41.5 dBm typ. at 1960 MHz
• Surface-Mountable Power Plastic Package

SXA-289 Typical Application

• PCS, Cellular Systems
• High Linearity IF Amplifiers

SXA-3318B General Description

Sirenza Microdevices' SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications.

Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.

SXA-3318B Maximum Ratings

Parameter	Absolute Limit
Max. Supply Current (I_D ) per amplifier (2 amplifiers per packaged part)	240mA
Max. Device Voltage (V_CC)	6.0 V
Max. Power Dissipation per amplifier (2 amplifiers per packaged part)	1500mW
Max. RF Input Power per amplifier (2 amplifiers per packaged part)	100mW
Max. Junction Temp. (T_J)	+160°C
Operating Temp. Range (T_L)	-40°C to +85°C
Max. Storage Temp.	+150°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I_DV_CC (max) < (T_J - T_L )/R_ht,j-l

SXA-3318B Features

• On-chip Active Bias Control
• Balanced for excellent input/output VSWR and minimized reflections
• High OIP3 : +47 dBm typ.
• High P1dB : +28 dBm typ.
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package

SXA-3318B Typical Application

• W-CDMA, PCS, Cellular Systems
• High Linearity IF Amplifiers
• Multi-Carrier Applications

SXA-389 General Description

Sirenza Microdevices' SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications.

Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.

SXA-389 Maximum Ratings

Parameter	Absolute Limit
Max. Supply Current (I_D )	240mA
Max. Device Voltage (V_CC)	6.0 V
Max. Power Dissipation	1500mW
Max. RF Input Power	100mW
Max. Junction Temp. (T_J)	+165°C
Operating Lead Temp. (T_L)	-40°C to +85°C
Max. Storage Temp.	+150°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I_DV_CC (max) < (T_J - T_L )/R_{ht ,}j-l

SXA-389 Features

• On-chip Active Bias Control, Single 5V Supply
• High Output 3rd Order Intercept: +42 to +44 dBm typ.
• High P1dB : +25 dBm typ.
• High Gain: +19 dB at 850 MHz
• High Efficiency: consumes only 600 mW
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package

SXA-389 Typical Application

• W-CDMA, PCS, Cellular Systems
• High Linearity IF Amplifiers
• Multi-Carrier Applications

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