SXA-3318B

IC AMP HBT GAAS 1/2W 8-SOIC

product image

SXA-3318B Picture
SeekIC No. : 004121184 Detail

SXA-3318B: IC AMP HBT GAAS 1/2W 8-SOIC

floor Price/Ceiling Price

Part Number:
SXA-3318B
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: RFMD
Processor Series : Stellaris 1000 Frequency: 400MHz ~ 2.5GHz
P1dB: 27dBm (501.2mW) ~ 28dBm (631mW) Gain: 10.5dB ~ 13.5dB
Noise Figure: 5.1dB RF Type: Cellular, W-CDMA, PCS, WLL, WLAN
Voltage - Supply: 5V Current - Supply: 180mA ~ 280mA
Test Frequency: 2.14GHz Package / Case: 8-SOIC (0.154", 3.90mm Width)    

Description

Series: -
Manufacturer: RFMD
Voltage - Supply: 5V
Packaging: Tape & Reel (TR)
Test Frequency: 2.14GHz
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Noise Figure: 5.1dB
Frequency: 400MHz ~ 2.5GHz
RF Type: Cellular, W-CDMA, PCS, WLL, WLAN
P1dB: 27dBm (501.2mW) ~ 28dBm (631mW)
Gain: 10.5dB ~ 13.5dB
Current - Supply: 180mA ~ 280mA


Features:

• On-chip Active Bias Control
• Balanced for excellent input/output VSWR and minimized reflections
• High OIP3 : +47 dBm typ.
• High P1dB : +28 dBm typ.
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package



Application

• W-CDMA, PCS, Cellular Systems
• High Linearity IF Amplifiers
• Multi-Carrier Applications



Specifications

Parameter Absolute Limit
Max. Supply Current (ID ) per amplifier
(2 amplifiers per packaged part)
240mA
Max. Device Voltage (VCC) 6.0 V
Max. Power Dissipation per amplifier
(2 amplifiers per packaged part)
1500mW
Max. RF Input Power per amplifier
(2 amplifiers per packaged part)
100mW
Max. Junction Temp. (TJ) +160°C
Operating Temp. Range (TL) -40°C to +85°C
Max. Storage Temp. +150°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression:
                          IDV CC (max) < (TJ - TL )/Rht ,j-l



Description

Sirenza Microdevices' SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. The SXA-3318B is fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

The SXA-3318B is specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications.

Its high linearity makes SXA-3318B an ideal choice for multi-carrier as well as digital applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Transformers
RF and RFID
Inductors, Coils, Chokes
Soldering, Desoldering, Rework Products
Memory Cards, Modules
View more