IC AMP HBT GAAS 1/2W 8-SOIC
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Series: | - | Manufacturer: | RFMD | ||
Processor Series : | Stellaris 1000 | Frequency: | 400MHz ~ 2.5GHz | ||
P1dB: | 27dBm (501.2mW) ~ 28dBm (631mW) | Gain: | 10.5dB ~ 13.5dB | ||
Noise Figure: | 5.1dB | RF Type: | Cellular, W-CDMA, PCS, WLL, WLAN | ||
Voltage - Supply: | 5V | Current - Supply: | 180mA ~ 280mA | ||
Test Frequency: | 2.14GHz | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Parameter | Absolute Limit |
Max. Supply Current (ID ) per amplifier (2 amplifiers per packaged part) |
240mA |
Max. Device Voltage (VCC) | 6.0 V |
Max. Power Dissipation per amplifier (2 amplifiers per packaged part) |
1500mW |
Max. RF Input Power per amplifier (2 amplifiers per packaged part) |
100mW |
Max. Junction Temp. (TJ) | +160°C |
Operating Temp. Range (TL) | -40°C to +85°C |
Max. Storage Temp. | +150°C |
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDV CC (max) < (TJ - TL )/Rht ,j-l |
Sirenza Microdevices' SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. The SXA-3318B is fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
The SXA-3318B is specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Its high linearity makes SXA-3318B an ideal choice for multi-carrier as well as digital applications.