Features: • Patented High Reliability GaAs HBT Technology• High Output 3rd Order Intercept : +41.5 dBm typ. at 1960 MHz• Surface-Mountable Power Plastic PackageApplication• PCS, Cellular Systems• High Linearity IF AmplifiersSpecifications Parameter Absolute Limi...
SXA-289: Features: • Patented High Reliability GaAs HBT Technology• High Output 3rd Order Intercept : +41.5 dBm typ. at 1960 MHz• Surface-Mountable Power Plastic PackageApplication• P...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
• Patented High Reliability GaAs HBT Technology
• High Output 3rd Order Intercept : +41.5 dBm typ. at 1960 MHz
• Surface-Mountable Power Plastic Package
Parameter | Absolute Limit |
Device Voltage | 6V |
Device Current | 200mA |
Power Dissipation | 1500mW |
RF Input Power | 100mW |
Junction Temperature | +150°C |
Operating Temperature | -40°C to +85°C |
Storage Temperature | -65°C to +150°C |
Stanford Microdevices' SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
The SXA-289 are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.