SUB60N04-05LT, SUB60N04-15LT, SUB60N06 Selling Leads, Datasheet
MFG:VISHAY Package Cooled:TO-263 D/C:04+
SUB60N04-05LT, SUB60N04-15LT, SUB60N06 Datasheet download
Part Number: SUB60N04-05LT
MFG: VISHAY
Package Cooled: TO-263
D/C: 04+
MFG:VISHAY Package Cooled:TO-263 D/C:04+
SUB60N04-05LT, SUB60N04-15LT, SUB60N06 Datasheet download
MFG: VISHAY
Package Cooled: TO-263
D/C: 04+
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PDF/DataSheet Download
Datasheet: SUB15P01-52
File Size: 49386 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SUB60N04-15LT
File Size: 270542 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: SUB60N06-18
File Size: 65595 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
The SUB60N04-15LT is a 40-V n-channel, 15-m logic level MOSFET in a 5-lead D2PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology.
Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET.
The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes.
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | 40 | V | |
Gate-Source Voltage | VGS | ±20 | ||
VGS Clamp Current | IG | 50 | mA | |
Continuous Drain Current (TJ = 175) | TC = 25 | ID | 60 | A |
TC = 125 | 50 | |||
Source-to-Cathode Voltage | VSC | 100 | V | |
Source-to-Anode Voltage | VSA | 100 | ||
Avalanche Current | IAR | 50 | A | |
Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 125 | mJ |
Maximum Power Dissipation | TC = 25 | PD | 110 | W |
TA = 25 | 3.75 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 |