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SUB60N06-18

MOSFET 60V 60A 120W

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SeekIC No. : 00152025 Detail

SUB60N06-18: MOSFET 60V 60A 120W

SUB60N06-18 Data Sheet

floor Price/Ceiling Price

US $ 2.16~2.84 / Piece | Get Latest Price
Part Number:
SUB60N06-18
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~100
  • 100~500
  • 500~800
  • Unit Price
  • $2.84
  • $2.3
  • $2.16
  • $2.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 18 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-263-3
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 18 mOhms


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage

VDS

60

V

Gate-Source Voltage VGS ±20
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID 60 A
TC = 125 39
Pulsed Drain Current IDM 120
Avalanche Current
IAS 60
Repetitive Avalanche Energya

L = 0.1 mH

 EAS 180
Power Dissipation TC = 25(TO-220AB and TO-263) PD 120b W
TA = 25(TO-263)c 3.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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