MOSFET 8V 15A 25W
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 8 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 15 A | ||
Resistance Drain-Source RDS (on) : | 52 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263-3 | Packaging : | Tube |
ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
Parameter |
Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | -8 | V | |
Gate-Source Voltage | VGS | ±8 | ||
Continuous Drain Current (TJ = 175) |
TC = 25 | ID | -15 | A |
TC = 125 | -8.7 | |||
Pulsed Drain Current | IDM | -25 | ||
Avalanche Current | IAR | -10 | ||
Repetitive Avalanche Energyb | L = 0.1 mH | EAR | 5 | mJ |
Power Dissipation | TC = 25 (TO-220AB and TO-263) | PD | 25d | W |
TA = 25 (TO-263)c | 2.1 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 |