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The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package. It is intented for use in linear and switching applications.
STX112 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
2
A
ICM
Collector Peak Current (tp < 5 ms)
4
A
IB
Base Current
50
mA
Ptot
Total Dissipation at Tamb= 25
1.2
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
STX112 Typical Application
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
STX13003 Parameters
Technical/Catalog Information
STX13003
Vendor
STMicroelectronics
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1A
Power - Max
1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic
1V @ 250mA, 1A
Frequency - Transition
-
Current - Collector Cutoff (Max)
1mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Straight Leads)
Packaging
Bulk
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
STX13003 STX13003
STX13003 General Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STX13003 is designed for use in compact fluorescent lamp application.
STX13003 Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
700
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage (IC = 0) (IC = 0, IB = -0.5 A, tp < 10s, Tj < 150)