MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:O9+
STX1117-3.3, STX112, STX13003 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-247
D/C: O9+
Description: TRANSISTOR NPN FAST SW HV TO-92
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PDF/DataSheet Download
Datasheet: STX112
File Size: 155572 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STX112
File Size: 155572 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STX13003
File Size: 241770 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STX112 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 2A |
| Power - Max | 1.2W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 2mA |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3 (Straight Leads) |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STX112 STX112 |
The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package. It is intented for use in linear and switching applications.
| Symbol | Parameter | Value | Unit |
| VCBO |
Collector-Base Voltage (IE = 0) |
100 | V |
| VCEO |
Collector-Emitter Voltage (IB = 0) |
100 | V |
| VEBO |
Emitter-Base Voltage (IC = 0) |
5 | V |
|
IC |
Collector Current |
2 |
A |
| ICM |
Collector Peak Current (tp < 5 ms) |
4 | A |
| IB |
Base Current |
50 | mA |
| Ptot |
Total Dissipation at Tamb= 25 |
1.2 | W |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
| Technical/Catalog Information | STX13003 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 1.5W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 500mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 250mA, 1A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3 (Straight Leads) |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STX13003 STX13003 |
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STX13003 is designed for use in compact fluorescent lamp application.
| Symbol | Parameter | Value | Unit |
| VCES |
Collector-Emitter Voltage (VBE = 0) |
700 | V |
| VCEO |
Collector-Emitter Voltage (IB = 0) |
400 | V |
| VEBO |
Emitter-Base Voltage (IC = 0) |
V(BR)EBO | V |
|
IC |
Collector Current |
1 |
A |
| ICM |
Collector Peak Current (tp < 5 ms) |
3 | A |
| IB |
Base Current |
0.5 | A |
| IBM |
Base Peak Current (tp < 5 ms) |
1.5 | A |
| Ptot |
Total Dissipation at TC = 25 |
1.5 | W |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
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