Transistors Bipolar (BJT) POWER TRANSISTOR
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Transistors Bipolar (BJT) Medium current High Perf Fast Switch NPN
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 300 | Configuration : | Single |
Maximum Operating Frequency : | 100 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Bulk |
Symbol | Parameter | Value | Unit |
VCBO |
Collector-Base Voltage (IE = 0) |
-60 | V |
VCER |
Collector-Emitter Voltage (RBE = 47) |
-60 | V |
VEBO |
Emitter-Base Voltage (IC = 0) |
-5 | V |
IC |
Collector Current |
-3 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
-6 | A |
Ptot |
Total Dissipation at Tamb = 25 |
0.9 | W |
Tstg |
Storage Temperature |
-65 to 150 | |
Tj |
Max. Operating Junction Temperature |
150 |