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The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STX83003 is expressly designed for a new solution to be used in compact fluorescent lamps,where it is coupled with the STX93003, its complementary PNP transistor.
STX83003 Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
700
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage (IC = 0, IB = 0.5 A, tp < 10s, Tj < 150)