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This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STT2PF60L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain- gate Voltage (RGS = 20 k)
60
V
VGS
Gate-Source Voltage
±15
V
ID
Drain Current (continuous) at Tc = 25
2
A
ID
Drain Current (continuous) at Tc = 100
1.3
A
IDM(`)
Drain Current (pulsed)
8
A
PTOT
Total Dissipation at Tc = 25
1.6
W
(•)Pulse width limited by safe operating area
STT2PF60L Typical Application
· DC MOTOR DRIVE ·DC-DC CONVERTERS · BATTERY MANAGEMENT IN NOMADIC EQUIPMENT · POWER MANAGEMENT IN PORTABLE/DESKTOP PCs · CELLULAR