Application·DC-DC & DC-AC CONVERTERS·DC MOTOR CONTROL (DISK DRIVES, etc.)·SYNCHRONOUS RECTIFICATIONPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k) 100 V VGS Gate-...
STT1NF100: Application·DC-DC & DC-AC CONVERTERS·DC MOTOR CONTROL (DISK DRIVES, etc.)·SYNCHRONOUS RECTIFICATIONPinoutSpecifications Symbol Parameter Value Unit VDS Drain-source Volta...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V |
VGS |
Gate-Source Voltage |
± 20 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
1 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
0.6 |
A |
IDM(`) |
Drain Current (pulsed) |
4 |
A |
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
Derating Factor |
0.013 |
W/ | |
dv/dt(1) |
Peak Diode Recovery voltage slope |
20 |
V/ns |
Tstg |
Storage Temperature |
-55 to 150
|
|
Tj |
Max. Operating Junction Temperature |
This Power MOSFET STT1NF100 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.