MFG:STMicroelectronics Category:Discrete Semiconductor Products D/C:08+
STQ2NK60ZR-AP, STQ2NK60ZR-AP(E), STQ3NK50ZR-AP Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled:
D/C: 08+
Description: MOSFET N-CH 500V 500MA TO-92
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Datasheet: STQ2NK60ZR-AP
File Size: 538302 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STQ-1016
File Size: 150146 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: STQ3NK50ZR-AP
File Size: 493458 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | ||
|
TO-220 / IPAK |
TO-92 |
TO-220FP | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
800 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
800 |
V | ||
| VGS | Gate-Source Voltage |
±30 |
V | ||
| ID | Drain Current (continuous) at TC = 25 |
1.4 |
0.4 |
1.4 |
A |
| ID | Drain Current (continuous) at TC = 100 |
0.77 |
0.25 |
0.77 |
A |
| IDM(`) | Drain Current (pulsed) |
5.6 |
1.6 |
5.6 |
A |
| PTOT | Total Dissipation at TC = 25 |
45 |
3 |
20 |
W |
| Derating Factor |
0.36 |
0.025 |
0.16 |
W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
1500 |
KV | ||
| dv/dt(1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
- |
2500 |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
| ||
| Technical/Catalog Information | STQ3NK50ZR-AP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 500mA |
| Rds On (Max) @ Id, Vgs | 3.3 Ohm @ 1.15A, 10V |
| Input Capacitance (Ciss) @ Vds | 280pF @ 25V |
| Power - Max | 3W |
| Packaging | Tape & Box (TB) |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | TO-92-3 (Formed Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STQ3NK50ZR AP STQ3NK50ZRAP |
The SuperMESH™ series is obtained through an extreme opyimization of ST's well established strip based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs icluding revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | ||
| DPAK/IPAK |
TO-92 | ||||
| VDS | Collector-Source Voltage (VGS = 0 V) |
500 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | ||
| VGS | Gate-Source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuous) at TC = 25 |
2.3 |
0.5 |
A | |
| ID | Drain Current (continuous) at TC = 100 |
1.45 |
0.32 |
A | |
| IDM(`) | Drain Current (pulsed) |
9.2 |
2 |
A | |
| PTOT | Total Dissipation at TC = 25 |
45 |
3 |
W | |
| Derating Factor |
0.36 |
0.025 |
W/ | ||
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
2000 |
V | ||
| dv/dt(1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
|||
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