Position: Home  > All Categories> Integrated Circuits (ICs) > STQ1HNK60R

STQ1HNK60R

Features: ` TYPICAL RDS(on) = 8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` NEW HIGH VOLTAGE BENCHMARKApplication· SWITCH MODE LOW POWER SUPPLIES (SMPS)· LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS)· LOW POWER BATTERY CHARGERSSpecifications Symbol ...

product image

STQ1HNK60R Picture
See larger image
SeekIC No. : 004508662 Detail

STQ1HNK60R: Features: ` TYPICAL RDS(on) = 8 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` NEW HIGH VOLTAGE BENCHMARKApplication· SWITCH MODE LOW POWER SUPPLIES (SMPS)· LOW POW...

STQ1HNK60R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STQ1HNK60R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`  TYPICAL RDS(on) = 8
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  NEW HIGH VOLTAGE BENCHMARK




Application

·  SWITCH MODE LOW POWER SUPPLIES (SMPS)
·  LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS)
·  LOW POWER BATTERY CHARGERS


Specifications

Symbol Parameter
Value
Unit
STD1NK60
STD1NK60-1
STQ1HNK60R
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
1.0
0.4
A
ID Drain Current (continuous) at TC = 100
0.63

0.25
A
IDM(`) Drain Current (pulsed)
4
1.6
A
PTOT Total Dissipation at TC = 25
30
3
W
  Derating Factor
0.24
0.025
W/
dv/dt(1) Peak Diode Recovery voltage slope
3
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150
(•) Pulse width limited by safe operating area.
(1) ISD 1.0A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX


Description

The SuperMESH™ series STQ1HNK60R is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Test Equipment
TOP853
TOP2005
Tools
TCP202
G084SN05 V.3
Memory Cards, Modules
WT32
VTL5C7
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
View more