STQ1NE10L/APS, STQ1NK60ZR, STQ20162 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-92 D/C:06+
STQ1NE10L/APS, STQ1NK60ZR, STQ20162 Datasheet download
Part Number: STQ1NE10L/APS
MFG: ST
Package Cooled: TO-92
D/C: 06+
MFG:ST Package Cooled:TO-92 D/C:06+
STQ1NE10L/APS, STQ1NK60ZR, STQ20162 Datasheet download
MFG: ST
Package Cooled: TO-92
D/C: 06+
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PDF/DataSheet Download
Datasheet: STQ-1016
File Size: 150146 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STQ1NK60ZR
File Size: 673069 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STQ-1016
File Size: 150146 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Symbol | Parameter |
Value |
Unit | ||
IPAK |
TO-92 |
SOT-223 | |||
VDS | Collector-Source Voltage (VGS = 0 V) |
600 |
V | ||
VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | ||
VGS | Gate-Source Voltage |
±30 |
V | ||
ID | Drain Current (continuous) at TC = 25 |
0.8 |
0.3 |
0.3 |
A |
ID | Drain Current (continuous) at TC = 100 |
0.5 |
0.189 |
0.189 |
A |
IDM(`) | Drain Current (pulsed) |
3.2 |
1.2 |
1.2 |
A |
PTOT | Total Dissipation at TC = 25 |
25 |
3 |
3.3 |
W |
Derating Factor |
0.24 |
0.025 |
0.026 |
W/ | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
800 |
V | ||
dv/dt(1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |