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SPI10N10, SPI10N10L, SPI11N60C3

Table of contents:
Info of SPI10N10
Info of SPI10N10L
Info of SPI11N60C3

SPI10N10, SPI10N10L, SPI11N60C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:2008+

SPI10N10, SPI10N10L, SPI11N60C3 Datasheet download

Five Points

Part Number: SPI10N10

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: .

D/C: 2008+

Description: MOSFET N-CH 650V 11A TO-262

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SPI10N10 Parameters

Technical/Catalog Information	SPI10N10
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10.3A
Rds On (Max) @ Id, Vgs	170 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds	426pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19.4nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI10N10 SPI10N10

SPI10N10 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	10.3 7.8	A
Pulsed drain current T_C = 25 °C	I_D _puls	41.2	A
Avalanche energy, single pulse I_D =-8.8 A, V_DD = 25 V, R_GS = 25	E_AS	60	mJ
Reverse diode dv/dt I_S =10.3 A, V_DS = 80 V, di/dt = 200 A/s, T_jmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	V_GS	±20	V
Power dissipation T_C = 25 °C	P_tot	50	W
Operating and storage temperature	T_j, T_stg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

SPI10N10 Features

· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated

SPI10N10L Parameters

Technical/Catalog Information	SPI10N10L
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10.3A
Rds On (Max) @ Id, Vgs	154 mOhm @ 8.1A, 10V
Input Capacitance (Ciss) @ Vds	444pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI10N10L SPI10N10L

SPI11N60C3 Parameters

Technical/Catalog Information	SPI11N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI11N60C3 SPI11N60C3 SPI11N60C3IN ND SPI11N60C3INND SPI11N60C3IN

SPI11N60C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_B	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	11 7	11¹) 7¹)	A
Pulsed drain current, t_plimited by T_jmax	I_{D puls}	33	33	A
Avalanche energy, single pulse I_D=5.5A, V_DD=50V	E_AS	340	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax2) I_D=11A, V_DD=50V	E_AR	0.6	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	11	11	A
Gate source voltage static	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	125	33	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 480 V, I_D = 11 A, T_j= 125 °C	dv/dt	50		V/ns

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SPI11N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

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