SPI100N03S2-03

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 300W
Input Capacitance (Ciss) @ Vds: 7020pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
Supplier Device Package: PG-TO262-3


Features:

· N-Channel
· Enhancement mode
· Excellent Gate Charge x R_DS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current1) TC = 25 °C	ID	100 100	A
Pulsed drain current TC = 25 °C	ID puls	400
Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25	EAS	810	mJ
Repetitive avalanche energy, limited by Tjmax 2)	EAR	30
Reverse diode dv/dt IS =100 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	300	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

¹ Current limited by bondwire ; with an R_thJC = 0.5K/W the chip is able to carry I_D= 135A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
² Defined by design. Not subject to production test

Description

The SPI100N03S2-03 is designed as one kind of optiMOS power-transistors.

SPI100N03S2-03 has seven features. (1)N-channel. (2)Enhancement mode. (3)Excellent gate charge x Rds(on) product (FOM). (4)Superior thermal resistance. (5)175°C operating temperature. (6)Avalanche rated. (7)dv/dt rated. Those are all the main features.

Some absolute maximum ratings of SPI100N03S2-03 have been concluded into several points as follow. (1)Its continuous drain current would be 100A. (2)Its pulsed drain current would be 400A. (3)Its avalanche energy, single pulse Id=80A, Vdd=25V, rgs=25ohms. (4)Its repetitive avalanche energy limited by Tjmax would be 30mJ. (5)Its reverse diode dv/dt would be 6kV/us. (6)Its gate source voltage would be +/-20V. (7)Its power dissipation would be 300W. (8)Its operating temperature range would be from -55°C to 175°C. (9)Its storage temperature range would be from -55°C to 175°C. (10)Its IEC climatic category DIN IEC 68-1 would be 55/175/56. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SPI100N03S2-03 are concluded as follow. (1)Its drain to source breakdown voltage would be min 30V. (2)Its gate threshold voltage Vgs=Vds would be min 2.1V and typ 3V and max 4V. (2)Its zero gate voltage drain current would be typ 0.01uA and max 1uA with conditions of Vds=30V and Vgs=0V and Tj=25°C and would be typ 1uA and max 100uA with conditions of Vds=30V and Vgs=0V and Tj=125°C. (3)Its drain to source on-state resistance would be typ 2.5mohms and max 3.3mohms with conditions of Vgs=10V and Id=80A and would be typ 2.2mohms and max 3mohms with conditions of Vgs=10V and Id=80A and SMD version. (4)Its gate to source leakage current would be typ 1nA and max 100nA with conditions of Vgs=20V and Vds=0. And so on. If you have any question or suggestion or want to know more information about SPI100N03S2-03 please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	SPI100N03S2-03
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	7020pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPI100N03S2 03 SPI100N03S203