MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO262-3-1 D/C:08+/09+
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SPI08N80C3, SPI100N03S2-03, SPI100N03S2L-03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: P-TO262-3-1
D/C: 08+/09+
Description: MOSFET N-CH 30V 100A TO-262
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PDF/DataSheet Download
Datasheet: SPI07N60C3
File Size: 383177 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPI100N03S2-03
File Size: 426420 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPI100N03S2L-03
File Size: 427409 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPI08N80C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 5.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
| Power - Max | 40W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPI08N80C3 SPI08N80C3 SPI08N80C3IN ND SPI08N80C3INND SPI08N80C3IN |
| Technical/Catalog Information | SPI100N03S2-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 7020pF @ 25V |
| Power - Max | 300W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPI100N03S2 03 SPI100N03S203 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 100 100 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 400 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS =100 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 135A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPI100N03S2L-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 8180pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 220nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPI100N03S2L 03 SPI100N03S2L03 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 100 100 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 400 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS =100 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 245A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
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