MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:7850 D/C:04+
SGS10N60RUF, SGS10N60RUFD, SGS10N60RUFDTU Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 7850
D/C: 04+
Description: IGBT W/DIODE 600V 10A TO-220F
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PDF/DataSheet Download
Datasheet: SGS10N60RUF
File Size: 578175 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGS10N60RUFD
File Size: 633967 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGS10N60
File Size: 633967 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
| Symbol | Description | SGH20N120RUFD | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC = 25 | 16 | A |
| Collector Current @ TC = 100 | 10 | A | |
| I CM(1) | Pulsed Collector Current | 30 | A |
| TSC | Short Circuit Withstand Time @ TC = 100 | 10 | s |
| PD | Maximum Power Dissipation @ TC = 25 | 55 | W |
| Maximum Power Dissipation @ TC = 100 | 22 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.
The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
| Symbol | Description | SGH20N120RUFD | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC = 25 | 16 | A |
| Collector Current @ TC = 100 | 10 | A | |
| I CM(1) | Pulsed Collector Current | 30 | A |
| IF | Diode Continuous Forward Current @ TC = 100 | 12 | A |
| IFM | Diode Maximum Forward Current | 92 | A |
| TSC | Short Circuit Withstand Time @ TC = 100 | 10 | s |
| PD | Maximum Power Dissipation @ TC = 25 | 55 | W |
| Maximum Power Dissipation @ TC = 100 | 22 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | SGS10N60RUFDTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 16A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Power - Max | 55W |
| Mounting Type | Through Hole |
| Package / Case | TO-220F |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SGS10N60RUFDTU SGS10N60RUFDTU |
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