SGS10N60RUFD

Features: • Short circuit rated 10us @ TC = 100, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A• High input impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC Motor controls, general purpose inverters, ro...

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SeekIC No. : 004489515 Detail

SGS10N60RUFD: Features: • Short circuit rated 10us @ TC = 100, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A• High input impedance• CO-PAK, I...

floor Price/Ceiling Price

Part Number:
SGS10N60RUFD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Short circuit rated 10us @ TC = 100, VGE = 15V
• High speed switching
• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)



Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls


Specifications

Symbol Description SGH20N120RUFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ±20 V
IC Collector Current @ TC = 25 16 A
Collector Current @ TC = 100 10 A
I CM(1) Pulsed Collector Current 30 A
IF Diode Continuous Forward Current @ TC = 100 12 A
IFM Diode Maximum Forward Current 92 A
TSC Short Circuit Withstand Time @ TC = 100 10 s
PD Maximum Power Dissipation @ TC = 25 55 W
Maximum Power Dissipation @ TC = 100 22 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300



Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.

The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.




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