Position: Home  > All Categories> Integrated Circuits (ICs) > SGS10N60RUFD

SGS10N60RUFD

Features: • Short circuit rated 10us @ TC = 100, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A• High input impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC Motor controls, general purpose inverters, ro...

product image

SGS10N60RUFD Picture
See larger image
SeekIC No. : 004489515 Detail

SGS10N60RUFD: Features: • Short circuit rated 10us @ TC = 100, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A• High input impedance• CO-PAK, I...

SGS10N60RUFD Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SGS10N60RUFD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Short circuit rated 10us @ TC = 100, VGE = 15V
• High speed switching
• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)


Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls


Specifications

Symbol Description SGH20N120RUFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ±20 V
IC Collector Current @ TC = 25 16 A
Collector Current @ TC = 100 10 A
I CM(1) Pulsed Collector Current 30 A
IF Diode Continuous Forward Current @ TC = 100 12 A
IFM Diode Maximum Forward Current 92 A
TSC Short Circuit Withstand Time @ TC = 100 10 s
PD Maximum Power Dissipation @ TC = 25 55 W
Maximum Power Dissipation @ TC = 100 22 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300



Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.

The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Cable Assemblies
CS1W-CN114
XW2Z-500T
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Kits
IT243
UVSC-110-4E1
Circuit Protection
A50QS75-4Y
F-17*77
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more