IGBT Transistors 600V/10A
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Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Features: • Short circuit rated 10us @ TC = 100, VGE = 15V• High speed switching•...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 16 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 55 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220F-3 | Packaging : | Tube |