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SGS10N60RUFDTU

IGBT Transistors 600V/10A/w/FRD

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SeekIC No. : 00143431 Detail

SGS10N60RUFDTU: IGBT Transistors 600V/10A/w/FRD

SGS10N60RUFDTU Data Sheet

floor Price/Ceiling Price

US $ .59~.8 / Piece | Get Latest Price
Part Number:
SGS10N60RUFDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.8
  • $.66
  • $.61
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 16 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 55 W Maximum Operating Temperature : + 150 C
Package / Case : TO-220F-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Gate-Emitter Leakage Current : +/- 100 nA
Continuous Collector Current at 25 C : 16 A
Package / Case : TO-220F-3
Power Dissipation : 55 W


Parameters:

Technical/Catalog InformationSGS10N60RUFDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)16A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 10A
Power - Max55W
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGS10N60RUFDTU
SGS10N60RUFDTU



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