Features: · SGS-THOMSON PREFERRED SALESTYPE· PNP DARLINGTON· INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODEApplication· GENERAL PURPOSE SWITCHINGSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -60 V VCEO Collector-Emitter Voltage (IB = 0) ...
SGS125: Features: · SGS-THOMSON PREFERRED SALESTYPE· PNP DARLINGTON· INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODEApplication· GENERAL PURPOSE SWITCHINGSpecifications Symbol Parameter Value Un...
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Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Features: • Short circuit rated 10us @ TC = 100, VGE = 15V• High speed switching•...
Symbol | Parameter |
Value |
Unit |
VCBO | Collector-Base Voltage (IE = 0) |
-60 |
V |
VCEO | Collector-Emitter Voltage (IB = 0) |
-60 |
V |
VEBO | Base-Emitter Voltage (IC = 0) |
-5 |
V |
IC | Collector Current |
-5 |
A |
ICM | Collector Peak Current |
-8 |
A |
IB | Base Current |
-0.1 |
A |
Ptot | Total Power Dissipation at Tcase 25 Tamb 25 |
65 2 |
W W |
Tstg | Storage Temperature |
-65 to 150 |
|
Tj | Max Operating Junction Temperature |
150 |
The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in SOT82 plastic package, intented for use in power linear and switching applications.