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SGP10N60RUF, SGP10N60RUFD, SGP10N60RUFDTU

Table of contents:
Info of SGP10N60RUF
Info of SGP10N60RUFD
Info of SGP10N60RUFDTU

SGP10N60RUF, SGP10N60RUFD, SGP10N60RUFDTU Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:TO

SGP10N60RUF, SGP10N60RUFD, SGP10N60RUFDTU Datasheet download

Five Points

Part Number: SGP10N60RUFDTU

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: TO

Description: IGBT W/DIODE 600V 10A TO-220

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SGP10N60RUF General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.

The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGP10N60RUF Maximum Ratings

Symbol	Description	SGH20N120RUFD	Units
V_CES	Collector-Emitter Voltage	600	V
V_GES	Gate-Emitter Voltage	±20	V
I_C	Collector Current @ T_C = 25	16	A
I_C	Collector Current @ T_C= 100	10	A
I _CM(1)	Pulsed Collector Current	30	A
T_SC	Short Circuit Withstand Time @ T_C = 100	10	s
P_D	Maximum Power Dissipation @ T_C= 25	75	W
P_D	Maximum Power Dissipation @ T_C= 100	30	W
T_J	Operating Junction Temperature	-55 to +150
T_stg	Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300

SGP10N60RUF Features

• Short circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High speed switching
• Low saturation voltage : V _CE(sat) = 2.2 V @ I_C= 10A
• High input impedance

SGP10N60RUF Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGP10N60RUFD General Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.

The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGP10N60RUFD Maximum Ratings

Symbol	Description	SGH20N120RUFD	Units
V_CES	Collector-Emitter Voltage	600	V
V_GES	Gate-Emitter Voltage	±20	V
I_C	Collector Current @ T_C = 25	16	A
I_C	Collector Current @ T_C= 100	10	A
I _CM(1)	Pulsed Collector Current	30	A
I_F	Diode Continuous Forward Current @ T_C = 100	12	A
I_FM	Diode Maximum Forward Current	92	A
T_SC	Short Circuit Withstand Time @ T_C = 100	10	s
P_D	Maximum Power Dissipation @ T_C= 25	75	W
P_D	Maximum Power Dissipation @ T_C= 100	30	W
T_J	Operating Junction Temperature	-55 to +150
T_stg	Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300

SGP10N60RUFD Features

• Short circuit rated 10us @ T_C= 100°C, V_GE= 15V
• High speed switching
• Low saturation voltage : V _CE(sat) = 2.2 V @ I_C = 10A
• High input impedance
• CO-PAK, IGBT with FRD : t_rr = 42ns (typ.)

SGP10N60RUFD Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGP10N60RUFDTU Parameters

Technical/Catalog Information	SGP10N60RUFDTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	16A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 10A
Power - Max	75W
Mounting Type	Through Hole
Package / Case	TO-220
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SGP10N60RUFDTU SGP10N60RUFDTU

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