SGP10N60

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3


Description

The features of SGP10N60 are as follows: (1)low forward voltage drop; (2)high switching speed; (3)low tail current; (4)latch-up free; (5)avalanche rated.

What comes next is about the maximum ratings of SGP10N60: (1)collector-emitter voltage: 600 V; (2)collector-gate voltage, RGE = 20 k: 600V; (3)gate-emitter voltage: ± 20V; (4)DC collector current, TC = 25 °C: 25A and TC = 100 °C: 10A; (5)pulsed collector current, tp = 1 ms, TC = 25 °C: 50A and TC = 100 °C: 20A; (6)avalanche energy, single pulse, IC = 10 A, VCC = 50 V, RGE = 25 , L = 350 H, Tj = 25 °C: 18 mJ; (7)power dissipation, TC = 25 °C: 125W; (8)chip or operating temperature: -55 °C to + 150 °C; (9)storage temperature: -55 °C to + 150 °C; (10)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56; (11)thermal resistance, junction - case: 1 K/W.

The following is about the electrical characteristics of SGP10N60: (1)collector-emitter breakdown voltage, VGE = 0 V, IC = 0.5 mA, Tj = -55 °C: 600V min; (2)gate threshold voltage, VGE = VCE, IC = 0.3 mA, Tj = 25 °C: 3V min, 5V max and 4V typical; (3)collector-emitter saturation voltage, VGE = 15 V, IC = 10 A, Tj = 25 °C: 1.6V min, 2.5V max and 2V typical; (4)zero gate voltage collector current, VCE = 600 V, VGE = 0 V, Tj = 25 °C:  40 A max; (5)gate-emitter leakage current, VGE = 25 V, VCE = 0 V: 100nA max; (6)transconductance, VCE = 20 V, IC = 10 A: 2S min and 6.7S typical; (7)input capacitance, VCE = 25 V, VGE = 0 V, f = 1 MHz: 580pF typica and 750pF max; (8)output capacitance, VCE = 25 V, VGE = 0 V, f = 1 MHz: 70pF typica and 90pF max; (9)reverse transfer capacitance, VCE = 25 V, VGE = 0 V, f = 1 MHz: 50pF typica and 65pF max.