IGBT Transistors FAST IGBT NPT TECH 600V 10A
SGP10N60A: IGBT Transistors FAST IGBT NPT TECH 600V 10A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220-3 | Packaging : | Tube |
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCE |
600 |
V |
DC collector current TC = 25°C TC = 100°C |
IC |
20 10.6 |
A
|
Pulsed collector current, tp limited by Tjmax |
I Cpul s |
40 | |
Turn off safe operating area VCE 600V, Tj 150°C |
- |
40
| |
Gate-emitter voltage |
VGE |
±20 |
V |
Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C |
EAS |
70 |
mJ |
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
Power dissipation TC = 25°C |
P t o t |
92 |
W |
Operating junction and storage temperature |
Tj , Tstg |
-55...+150 |
°C |