Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A• High input impedance• CO-PAK, IGBT with FRD : trr = 42ns (typ.)ApplicationAC & DC motor controls, general purpose inverters, ...
SGP10N60RUFD: Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switching• Low saturation voltage : V CE(sat) = 2.2 V @ IC = 10A• High input impedance• CO-PAK,...
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Symbol | Description | SGH20N120RUFD | Units |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC = 25 | 16 | A |
Collector Current @ TC = 100 | 10 | A | |
I CM(1) | Pulsed Collector Current | 30 | A |
IF | Diode Continuous Forward Current @ TC = 100 | 12 | A |
IFM | Diode Maximum Forward Current | 92 | A |
TSC | Short Circuit Withstand Time @ TC = 100 | 10 | s |
PD | Maximum Power Dissipation @ TC = 25 | 75 | W |
Maximum Power Dissipation @ TC = 100 | 30 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.
The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.