MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:PG-TO220-2-2 D/C:2008+
SDT10S30, SDT10S60, SDT-1205P-100-120 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: PG-TO220-2-2
D/C: 2008+
Description: DIODE SCHOTTKY 10A 600V TO220-2
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PDF/DataSheet Download
Datasheet: SDT10S30
File Size: 633806 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SDT10S60
File Size: 212316 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SDT02S60
File Size: 209371 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SDT10S30 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Diode Type | Silicon Carbide |
| Voltage - DC Reverse (Vr) (Max) | 300V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 200A @ 300V |
| Speed | No Recovery Time > 500mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220AC |
| Packaging | Tube |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SDT10S30 SDT10S30 SDT10S30IN ND SDT10S30INND SDT10S30IN |
| Parameter |
Symbol |
Value |
Unit |
| Continuous forward current, TC=100 |
IF |
10 |
A |
| RMS forward current, f=50Hz |
IFRMS |
14 | |
| Surge non repetitive forward current, sine halfwave TC=25, tp=10ms |
IFSM |
36 | |
| Repetitive peak forward current Tj=150, TC=100, D=0.1 |
IFRM |
45 | |
| Non repetitive peak forward current tp=10µs, TC=25 |
IFMAX |
100 | |
| i 2t value, TC=25, tp=10ms |
i2dt |
6.5 |
A²s |
| Repetitive peak reverse voltage |
VRRM |
300 |
V |
| Surge peak reverse voltage |
VRSM |
300 | |
| Power dissipation, TC=25 |
Ptot |
65 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +175 |
|
| Technical/Catalog Information | SDT10S60 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Diode Type | Silicon Carbide |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 350A @ 600V |
| Speed | No Recovery Time > 500mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220-2 |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | 350pF @ 0V, 1MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SDT10S60 SDT10S60 |
|
Parameter |
Symbol |
Value |
Unit |
| Continuous forward current, TC=100°C |
IF |
10 |
A |
| RMS forward current, f=50Hz |
IFRMS |
14.1 | |
| Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms |
IFSM |
31 | |
| Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 |
IFRM |
39 | |
| Non repetitive peak forward current tp=10s, TC=25°C |
IFMAX |
100 | |
| i 2t value, TC=25°C, tp=10ms |
Ji2dt |
4.8 |
A2s |
| Repetitive peak reverse voltage |
VRRM |
600 |
V |
| Surge peak reverse voltage |
VRSM |
600 | |
| Power dissipation, TC=25°C |
Ptot |
75 |
W |
| Operating and storage temperature |
Tj,Tstg |
-55to+175 |
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