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SDT0402T-2R2M-S-1, SDT0402T-330M, SDT04S60

Table of contents:
Info of SDT0402T-2R2M-S-1
Info of SDT0402T-330M
Info of SDT04S60

SDT0402T-2R2M-S-1, SDT0402T-330M, SDT04S60 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:14X0.5K D/C:07+

SDT0402T-2R2M-S-1, SDT0402T-330M, SDT04S60 Datasheet download

Five Points

Part Number: SDT04S60

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 14X0.5K

D/C: 07+

Description: SCHOTTKY 600V 4A TO220-2-2

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SDT04S60 Parameters

Technical/Catalog Information	SDT04S60
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.9V @ 4A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	200A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220AC
Packaging	Tube
Capacitance @ Vr, F	150pF @ 0V, 1MHz
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SDT04S60 SDT04S60 SDT04S60IN ND SDT04S60INND SDT04S60IN

SDT04S60 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous forward current, T_C=100	I_F	4	A
RMS forward current, f=50Hz	I_FRMS	5.6
Surge non repetitive forward current, sine halfwave T_C=25, tp=10ms	I_FSM	12.5
Repetitive peak forward current T_j=150, T_C=100, D=0.1	I_FRM	18
Non repetitive peak forward current t_p=10µs, T_C=25	I_FMAX	40
i ²t value, T_C=25, t_p=10ms	_i2dt	0.78	A²s
Repetitive peak reverse voltage	V_RRM	600	V
Surge peak reverse voltage	V_RSM	600	V
Power dissipation, T_C=25	P_tot	36.5	W
Operating and storage temperature	T_j, T_stg	-55... +175

SDT04S60 Features

• Worlds first 600V Schottky diode
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• Ideal diode for Power Factor Correction up to 800W¹)
• No forward recovery

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