S2800A, S2800B, S2800D Selling Leads, Datasheet
MFG:MOTOROLA
S2800A, S2800B, S2800D
- Table of contents:
Info of S2800A
Info of S2800B
Info of S2800D
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About S2800A
PDF/DataSheet Download
Datasheet: S2800A
File Size: 205303 KB
Manufacturer: GESS [GE Solid State]
Download : Click here to Download
About S2800B
PDF/DataSheet Download
Datasheet: S2800B
File Size: 205303 KB
Manufacturer: GESS [GE Solid State]
Download : Click here to Download
About S2800D
PDF/DataSheet Download
Datasheet: S2800D
File Size: 205303 KB
Manufacturer: GESS [GE Solid State]
Download : Click here to Download
S2800A Maximum Ratings
|
Rating |
Symbol |
Value |
Unit | |
| Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 100°C, Gate Open) |
S2800 F A B D M N |
VRRM VDRM |
50 100 200 400 600 800 |
V |
| Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1) |
S2800 F A B D M N |
VRSM VDSM |
75 125 250 500 700 900 |
V |
| RMS Forward Current (All Conduction Angles) TC = 75°C |
IT(RMS) |
10 |
A | |
| Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C) |
ITSM |
100 |
A | |
| Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
40 |
A2s | |
| Forward Peak Gate Power (t 10 s) |
PGM |
16 |
W | |
| Forward Average Gate Power |
PG(AV) |
0.5 |
W | |
| Operating Junction Temperature Range |
TJ |
40 to +100 |
°C | |
| Storage Temperature Range |
Tstg |
40 to +150 |
°C | |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
S2800B Maximum Ratings
|
Rating |
Symbol |
Value |
Unit | |
| Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 100°C, Gate Open) |
S2800 F A B D M N |
VRRM VDRM |
50 100 200 400 600 800 |
V |
| Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1) |
S2800 F A B D M N |
VRSM VDSM |
75 125 250 500 700 900 |
V |
| RMS Forward Current (All Conduction Angles) TC = 75°C |
IT(RMS) |
10 |
A | |
| Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C) |
ITSM |
100 |
A | |
| Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
40 |
A2s | |
| Forward Peak Gate Power (t 10 s) |
PGM |
16 |
W | |
| Forward Average Gate Power |
PG(AV) |
0.5 |
W | |
| Operating Junction Temperature Range |
TJ |
40 to +100 |
°C | |
| Storage Temperature Range |
Tstg |
40 to +150 |
°C | |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
S2800D Maximum Ratings
|
Rating |
Symbol |
Value |
Unit | |
| Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 100°C, Gate Open) |
S2800 F A B D M N |
VRRM VDRM |
50 100 200 400 600 800 |
V |
| Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1) |
S2800 F A B D M N |
VRSM VDSM |
75 125 250 500 700 900 |
V |
| RMS Forward Current (All Conduction Angles) TC = 75°C |
IT(RMS) |
10 |
A | |
| Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C) |
ITSM |
100 |
A | |
| Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
40 |
A2s | |
| Forward Peak Gate Power (t 10 s) |
PGM |
16 |
W | |
| Forward Average Gate Power |
PG(AV) |
0.5 |
W | |
| Operating Junction Temperature Range |
TJ |
40 to +100 |
°C | |
| Storage Temperature Range |
Tstg |
40 to +150 |
°C | |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
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