RFP10N15, RFP10N15L, RFP10P03L Selling Leads, Datasheet
MFG:Intersil Package Cooled:9800 D/C:TO
RFP10N15, RFP10N15L, RFP10P03L Datasheet download
Part Number: RFP10N15
MFG: Intersil
Package Cooled: 9800
D/C: TO
MFG:Intersil Package Cooled:9800 D/C:TO
RFP10N15, RFP10N15L, RFP10P03L Datasheet download
MFG: Intersil
Package Cooled: 9800
D/C: TO
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Datasheet: RFP10N15
File Size: 225812 KB
Manufacturer: INTERSIL [Intersil Corporation]
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PDF/DataSheet Download
Datasheet: RFP10N15L
File Size: 39560 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: RFP10P03L
File Size: 196569 KB
Manufacturer: HARRIS [Harris Corporation]
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The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
RFD10P03L, RFD10P03LSM, RFP10P03L |
UNITS | |
Drain to Source Voltage (Note 1) VDSS |
-30 |
V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR |
-30 |
V |
Gate to Source Voltage VGS |
±10 |
A |
Drain Current | ||
RMS Continuous ID |
10 |
V |
Pulsed Drain CurrentIDM |
See Figure 5 |
W |
Single Pulse Avalanche Rating EAS |
Refer to UIS Curve |
|
Derate above 25oC |
38 |
W |
Single Pulse Avalanche Energy RatingEAS |
Refer to UIS Curve |
|
Operating and Storage Temperature .TJ, TSTG |
-55 to 75 |
o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s TL |
300 |
o C |
Package Body for 10s, See Techbrief 334 Tpkg |
260 |
o C |