RFP12N10L

Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.2 Ohms


Description

The features of RFP12N10L are: (1)12A, 100V; (2)rDS(ON)=0.200; (3)design optimized for 5V gate drives; (4)can be directly from Q-MOS, N-MOS, TTL circuits; (5)compatible with automotive drive requirements; (6)SOA is power-dissipation limited; (7)nanosecond switching speeds; (8)linear transfer charaxteristics; (9)high input impedance; (10)majority carrier device.

The following is about the absolute maximum ratings of RFP12N10L: (1)drain-source voltage: 100V; (2)drain-gate voltage, Rgs=1M: 100V; (3)gate-source voltage: 10V; (4)pulsed drain current: 30A; (5)maximum power dissipation @ Tc=25: 60W; (6)linear derating factor: 0.48W/; (7)operating and storage temperature: -55 to +150.

The electrical characteristics of the RFP12N10L are: (1)drain-source breakdown voltage: 100V min at ID=250mA, VGS=0; (2)gate thresholad voltage: 1V min and 2V max at VDS=VGS, ID=250mA; (3)zero gate voltage drain: 1A max at VDS=65V; (4)gate-source leakage current: 100A max at VGS=10V, VDS=0; (5)drain-source on resistance: 0.2 max at ID=12A, VGS=5V; (6)input capacitance: 900pF max at VDS=25V, VGS=0V, f=1MHz; (7)output capacitance: 325pF max at VDS=25V, VGS=0V, f=1MHz.

Parameters:

Technical/Catalog Information	RFP12N10L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	200 mOhm @ 12A, 5V
Input Capacitance (Ciss) @ Vds	900pF @ 25V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP12N10L RFP12N10L