RF5110G, RF5117, RF5117CTR7 Selling Leads, Datasheet
MFG:RFMD Package Cooled:QFN16 D/C:07+
RF5110G, RF5117, RF5117CTR7 Datasheet download
Part Number: RF5110G
MFG: RFMD
Package Cooled: QFN16
D/C: 07+
MFG:RFMD Package Cooled:QFN16 D/C:07+
RF5110G, RF5117, RF5117CTR7 Datasheet download
MFG: RFMD
Package Cooled: QFN16
D/C: 07+
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PDF/DataSheet Download
Datasheet: RF5
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF5117
File Size: 281283 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF5
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
Frequency (MHz) | 150 to 960 |
Gain (dB) | 33 |
OP1dB (dBm) | 32 (ISM band) 35 (GSM/GPRS) |
Eff (%) | 50 (ISM band) 57 (GSM/GPRS) |
Vcc (V) | 2.8 to 3.6 (ISM band) 2.7 to 4.8 (GSM/GPRS) |
Package/Size (Dim in mm) | QFN, 3x3 mm |
The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications.
The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside ground. The RF5117 is designed to maintain linearity over a wide range of supply voltage and power output.
Parameter |
Rating |
Unit |
Supply Voltage Power Control Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity |
-0.5 to +6.0 -0.5 to 3.5 600 +10 -40 to +85 -40 to +150 JEDEC Level 3 |
VDC V mA dBm °C °C |