Features: • Single 3.3V Power Supply• +30dBm Saturated Output Power• 26dB Small Signal Gain• High Linearity• 1800MHz to 2800MHz Frequency Range• +17dBm PO, 11G, <3% EVMApplication• IEEE802.11B WLAN Applications• IEEE802.11G WLAN Applications•...
RF5117: Features: • Single 3.3V Power Supply• +30dBm Saturated Output Power• 26dB Small Signal Gain• High Linearity• 1800MHz to 2800MHz Frequency Range• +17dBm PO, 11G, &...
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Parameter |
Rating |
Unit |
Supply Voltage Power Control Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity |
-0.5 to +6.0 -0.5 to 3.5 600 +10 -40 to +85 -40 to +150 JEDEC Level 3 |
VDC V mA dBm °C °C |
The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications.
The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside ground. The RF5117 is designed to maintain linearity over a wide range of supply voltage and power output.