Features: • Single 3V Supply• 27dBm Linear Output Power• 26dB Linear Gain• 40% Linear Efficiency• On-board Power Down ModeApplication• 3V 1850-1910MHz CDMA-2000 Handsets• 3V 1920-1980MHz W-CDMA Handsets• Spread-Spectrum Systems• Commercial and ...
RF5176: Features: • Single 3V Supply• 27dBm Linear Output Power• 26dB Linear Gain• 40% Linear Efficiency• On-board Power Down ModeApplication• 3V 1850-1910MHz CDMA-2000 H...
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Parameter |
Rating |
Unit |
Supply Voltage (RF off) Supply Voltage (POUT31dBm) Bias Voltage (VBIAS) Control Voltage (VREG) Input RF Power Operating Case Temperature Storage Temperature |
+8.0 +5.0 +3.0 +3.0 +6 30 to +100 30 to +150 |
VDC VDC VDC VDC dBm °C °C |
The RF5176 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device RF5176 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 and W-CDMA handsets as well as other applications in the 1850MHz to 2000MHz band.
The device RF5176 is self-contained, and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over all recommended supply voltages. The device has a continuously variable bias circuit to allow idle current to be optimized for a given output power.