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RD20FM-T1/AZ, RD20HMF1, RD20HNP0221J

Table of contents:
Info of RD20FM-T1/AZ
Info of RD20HMF1
Info of RD20HNP0221J

RD20FM-T1/AZ, RD20HMF1, RD20HNP0221J Selling Leads, Datasheet

MFG:TDK CORP D/C:09+

RD20FM-T1/AZ, RD20HMF1, RD20HNP0221J Picture

RD20FM-T1/AZ, RD20HMF1, RD20HNP0221J Datasheet download

Five Points

Part Number: RD20FM-T1/AZ

MFG: TDK CORP

Package Cooled:

D/C: 09+

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RD20HMF1 General Description

RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.

RD20HMF1 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATINGS	UNIT
VDSS VGSS ID Pin Pch Tj Tstg Rthj-c	Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance	Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω - - - junction to case	30 +/-20 71.4 6 6 175 -40 to +175 2.1	V V W W A °C °C °C/W

Note: Above parameters are guaranteed independently.

RD20HMF1 Features

High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.

RD20HMF1 Typical Application

For output stage of high power amplifiers in 900MHz band Mobile radio sets.

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