Features: ` Flash Memory Plus SRAM
-Reduces Memory Board Space Required, Simplifying PCB Design Complexity
` Stacked-Chip Scale Package (Stacked-CSP) Technology
-Smallest Memory Subsystem Footprint
-Area : 8 x 10 mm for 16Mbit (0.13 m) Flash + 2Mbit or 4Mbit SRAM
-Area : 8 x 12 mm for 32Mbit (0.13 m) Flash + 4Mbit or 8Mbit SRAM
-Height : 1.20 mm for 16Mbit (0.13 m) Flash + 2Mbit or 4Mbit SRAM and 32Mbit (0.13um) Flash + 8Mbit SRAM
-Height : 1.40 mm for 32Mbit (0.13 m) Flash + 4Mbit SRAM
-This Family also includes 0.25 m and 0.18 m technologies
` Advanced SRAM Technology
-70 ns Access Time
-Low Power Operation
-Low Voltage Data Retention Mode
` Intel® Flash Data Integrator (FDI)
Software
-Real-Time Data Storage and Code Execution in the Same Memory Device
-Full Flash File Manager Capability
` Advanced+ Boot Block Flash Memory
-70 ns Access Time at 2.7 V
-Instant, Individual Block Locking
-128 bit Protection Register
-12 V Production Programming
-Ultra Fast Program and Erase Suspend
-Extended Temperature 25 °C to +85 °C
` Blocking Architecture
-Block Sizes for Code + Data Storage
-4-Kword Parameter Blocks (for data)
-64-Kbyte Main Blocks (for code)
-100,000 Erase Cycles per Block
` Low Power Operation
-Async Read Current: 9 mA (Flash)
-Standby Current: 7 A (Flash)
-Automatic Power Saving Mode
` Flash Technologies
-0.25 m ETOX™ VI, 0.18 m ETOX™ VII and 0.13 m ETOX™ VIII Flash Technologies
-28F160xC3, 28F320xC3DescriptionThe RD28F3204C3B70 series The C3 Stacked-CSP device combines flash and SRAM into a single package, and provides secure low-voltage memory solutions for portable applications. This memory family combines two memory technologies, flash memory and SRAM, in one package. The flash memory delivers enhanced security features, a block locking capability that allows instant locking/unlocking of any flash block with zero-latency, and a 128-bit protection register, RD28F3204C3B70 enable unique device identification,to meet the needs of next generation portable applications. Improved 12 V production programming can be used to improve factory throughput.
Features of the RD28F3204C3B70 are:(1)Flash &Memory& Plus &SRAM; (2)Stacked-Chip Scale &Package (StackedCSP) &Technology; (3)Advanced& SRAM &Technology; (4)Intel Flash& Data &Integrator (FDI) Software; (5)Advanced + &Boot Block Flash Memory; (6)Blocking& Architecture; (7)Low Power peration; (8)Flash Technologies.
The absolute maximum ratings of the RD28F3204C3B70 can be summarized as:(1)Extended &Operating &Temperature:25°C to +85°C; (2)Storage& Temperatur:65°C to +125°C; (3)Voltage on Any &Ball&(except F-VCC /F-VCCQ / S-VCC and F-VPP) with Respect to GND:0.5 V to +3.3 V; (4)F-VPP Voltage (for Block Erase and Program )with Respect &to &GND: 0.5 V to +13.5 V; (5)F-VCC / F-VCCQ / S-VCC Supply Voltage with Respect to GN:0.2V to +3.3 V; (6)Output Short Circuit Curren:100mA.
The electrical characteristics(Ta=25) of the RD28F3204C3B70 can be summarized as:(1)input low voltage:-0.2~0.6V; (2)input high voltage:2.3~Vcc+0.2V; (3)output low voltage:-0.10~0.10V; (4)output high voltage:Vcc-0.1V.If you want to know more information about RD28F3204C3B70 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .
RD28F3204C3B70 Data Sheet
