RD28F1602C3BD70

The RD28F1602C3BD70 series The C3 Stacked-CSP device combines flash and SRAM into a single package, and provides secure low-voltage memory solutions for portable applications. This RD28F1602C3BD70 series combines two memory technologies, flash memory and SRAM, in one package. The flash memory delivers enhanced security features, a block locking capability that allows instant locking/unlocking of any flash block with zero-latency, and a 128-bit protection register that enable unique RD28F1602C3BD70 series identification,to meet the needs of next generation portable applications. Improved 12 V production programming can be used to improve factory throughput.

Features of the RD28F1602C3BD70 are:(1)Flash &Memory& Plus &SRAM; (2)Stacked-Chip &Scale &Package (StackedCSP) &Technology; (3)Advanced& SRAM &Technology; (4)Intel Flash& Data &Integrator& (FDI)& Software; (5)Advanced + &Boot &Block &Flash &Memory; (6)Blocking& Architecture; (7)Low &Power &Operation; (8)Flash &Technologies.

The absolute maximum ratings of the RD28F1602C3BD70 can be summarized as:(1)Extended &Operating &Temperature:25°C to +85°C; (2)Storage& Temperatur:65°C to +125°C; (3)Voltage on Any &Ball&(except F-VCC /F-VCCQ / S-VCC and F-VPP) with  Respect   to  GND:0.5 V to +3.3 V; (4)F-VPP Voltage (for  Block  Erase  and  Program )with  Respect &to &GND: 0.5 V to +13.5 V; (5)F-VCC / F-VCCQ / S-VCC  Supply  Voltage  with  Respect  to  GN:0.2V to +3.3 V; (6)Output  Short  Circuit  Curren:100mA.

The electrical characteristics(Ta=25) of the RD28F1602C3BD70 can be summarized as:(1)input low voltage:-0.2~0.6V; (2)input high voltage:2.3~Vcc+0.2V; (3)output low voltage:-0.10~0.10V; (4)output high voltage:Vcc-0.1V.If you want to know more information about RD28F1602C3BD70 series such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .