RD20HMF1 Selling Leads, Price trend, RD20HMF1 DataSheet download, circuit diagram from SeekIC.com

Features: High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.ApplicationFor output stage of high power amplifiers in 900MHz band Mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSSVGSSIDPinPchTjTstgRthj-c Drain ...

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SeekIC No. : 004475517 Detail

RD20HMF1: Features: High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.ApplicationFor output stage of high power amplifiers in 900MHz band Mobile radio sets.Specifications ...

RD20HMF1 Data Sheet

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Part Number:: RD20HMF1
Supply Ability:: 5000

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Upload time: 2024/11/25

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Diodes (General Purpose, Power, Switching) SWITCHING DEVICE

Product Details

Description

Features:

High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.

Application

For output stage of high power amplifiers in 900MHz band Mobile radio sets.

Specifications

SYMBOL	PARAMETER	CONDITIONS	RATINGS	UNIT
VDSS VGSS ID Pin Pch Tj Tstg Rthj-c	Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance	Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω - - - junction to case	30 +/-20 71.4 6 6 175 -40 to +175 2.1	V V W W A °C °C °C/W

Note: Above parameters are guaranteed independently.

Description

RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.

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RD20HMF1

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