RD15HVF1, RD15M, RD15MBA/15 Selling Leads, Datasheet
MFG:MIT Package Cooled:TO-220 D/C:06+
RD15HVF1, RD15M, RD15MBA/15 Datasheet download
Part Number: RD15HVF1
MFG: MIT
Package Cooled: TO-220
D/C: 06+
MFG:MIT Package Cooled:TO-220 D/C:06+
RD15HVF1, RD15M, RD15MBA/15 Datasheet download
MFG: MIT
Package Cooled: TO-220
D/C: 06+
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PDF/DataSheet Download
Datasheet: RD15HVF1
File Size: 336170 KB
Manufacturer: Mitsubishi
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RD15M
File Size: 69071 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RD100E
File Size: 97493 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
SYMBOL | PARAMETER | CONDITIONS | RATINGS | UNIT |
VDSS | Drain to source voltage | Vgs=0V | 30 | V |
VGSS | Gate to source voltage | Vds=0V | +/-20 | V |
Pch | Channel dissipation | Tc=25°C | 48 | W |
Pin | Input power | Zg=Zl=50Ω | 1.5(Note2) | W |
ID | Drain current | - | 4 | A |
Tch | Channel temperature | - | 150 | °C |
Tstg | Storage temperature | - | -40 to +150 | °C |
Rth j-c | Thermal resistance | junction to case | 2.6 | °C/W |
•High power and High Gain:
Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz
•High Efficiency: 60%typ. on VHF Band
•High Efficiency: 55%typ. on UHF Band