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RD12MVS1

Features: ·High Power Gain:·Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz·High Efficiency: 57%typ. (175MHz)ApplicationFor output stage of high power amplifiers in VHF band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSSVGSSIDPinPchTjTstgRthj-c ...

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RD12MVS1: Features: ·High Power Gain:·Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz·High Efficiency: 57%typ. (175MHz)ApplicationFor output stage of high power amplifiers in VHF band mobile radio sets.Specificat...

RD12MVS1 Data Sheet

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Part Number:
RD12MVS1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·High Power Gain:
·Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
·High Efficiency: 57%typ. (175MHz)




Application

For output stage of high power amplifiers in VHF band mobile radio sets.




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c		 Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
VGS=0V
VDS=0V

Zg=Zl=50Ω
Tc=25°C


Junction to Case
50
+/- 20
4
2
50
150
40 to +125
2.5
V
V
A
W
W
°C
°C
°C/W
Note: Above parameters are guaranteed independently.




Description

RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.




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