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RD100HHF1

Features: •High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz•High Efficiency: 60%typ.on HF BandApplicationFor output stage of high power amplifiers in HF Band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to sour...

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RD100HHF1: Features: •High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz•High Efficiency: 60%typ.on HF BandApplicationFor output stage of high power amplifiers in HF Band mobil...

RD100HHF1 Data Sheet

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Part Number:
RD100HHF1
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band




Application

For output stage of high power amplifiers in HF Band mobile radio sets.




Specifications

SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25 176.5 W
Pin Input power Zg=Zl=50 12.5 W
ID Drain current - 25 A
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
R th j-c Thermal resistance junction to case 0.85 /W

Note 1: Above parameters are guaranteed independently.




Description

RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.




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