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RD100HHF, RD100HHF1, RD100HHF4

RD100HHF, RD100HHF1, RD100HHF4 Selling Leads, Datasheet

MFG:MIT  Package Cooled:SMD  D/C:08+

RD100HHF, RD100HHF1, RD100HHF4 Picture

RD100HHF, RD100HHF1, RD100HHF4 Datasheet download

Five Points

Part Number: RD100HHF

 

MFG: MIT

Package Cooled: SMD

D/C: 08+

 

 

 
 
 
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About RD100HHF1

PDF/DataSheet Download

Datasheet: RD100HHF1

File Size: 183434 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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About RD100HHF1

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Datasheet: RD100HHF1

File Size: 183434 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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  • RD10S-T1

  • Vendor: Nec Qty: 0 Note: 103  Adddate: 2024-11-25
  • Inquire Now
  • Yuexunfa Electronics   China
    Contact: Ms.linlinda   MSN:yanxuan5299@hotmail.com
    Tel: 86-755-83778358
    Fax: 86-755-83778378
    (18)

About RD100E

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Datasheet: RD100E

File Size: 97493 KB

Manufacturer: NEC [NEC]

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RD100HHF1 General Description

RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

RD100HHF1 Maximum Ratings

SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25 176.5 W
Pin Input power Zg=Zl=50 12.5 W
ID Drain current - 25 A
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
R th j-c Thermal resistance junction to case 0.85 /W

Note 1: Above parameters are guaranteed independently.

RD100HHF1 Features

•High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band

RD100HHF1 Typical Application

For output stage of high power amplifiers in HF Band mobile radio sets.

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