RA2CQ472J, RA3021AA, RA30H0608M Selling Leads, Datasheet
MFG:N/A Package Cooled:0402X2 D/C:09+
RA2CQ472J, RA3021AA, RA30H0608M Datasheet download
Part Number: RA2CQ472J
MFG: N/A
Package Cooled: 0402X2
D/C: 09+
MFG:N/A Package Cooled:0402X2 D/C:09+
RA2CQ472J, RA3021AA, RA30H0608M Datasheet download
MFG: N/A
Package Cooled: 0402X2
D/C: 09+
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PDF/DataSheet Download
Datasheet: RA202000A
File Size: 469762 KB
Manufacturer: POWEREX [Powerex Power Semiconductors]
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PDF/DataSheet Download
Datasheet: RA30441241
File Size: 132013 KB
Manufacturer: HAMLIN
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PDF/DataSheet Download
Datasheet: RA30H0608M
File Size: 67503 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
VDD | Drain Voltage | VGG<5V | 17 | V |
VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
Pin | Input Power | f=68-88MHz, ZG=ZL=50 |
100 | mW |
Pout | Output Power | 45 | W | |
Tcase(OP) | Operation Case Temperature Range | -30 to +110 | ||
Tstg | Storage Temperature Range | -40 to +110 |